PVT Growth of p-Type and Semi-Insulating 2-Inch 6H-SiC Crystals |
| Journal |
Materials Science Forum (Volumes 433 - 436) |
| Volume |
Silicon Carbide and Related Materials - 2002 |
| Edited by |
Peder Bergman and Erik Janzén |
| Pages |
55-58 |
| DOI |
10.4028/www.scientific.net/MSF.433-436.55 |
| Citation |
Michael Rasp et al., 2003, Materials Science Forum, 433-436, 55 |
| Online since |
September, 2003 |
| Authors |
Michael Rasp, Thomas L. Straubinger, Erwin Schmitt, Matthias Bickermann, Horst Sadowski, Sergey A. Reshanov |
| Keywords |
6H-SiC, Aluminium, Bulk Growth, Doping, p-Type SiC, PVT Growth, Resistivity, Semi-insulating (SI), Vanadium |
| Full Paper |
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