Paper Title:
Reduction of Interface Trapped Density of SiO2/4H-SiC by Oxidation of Atomic Oxygen
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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
563-566
DOI
10.4028/www.scientific.net/MSF.433-436.563
Citation
R. Kosugi, K. Fukuda, K. Arai, "Reduction of Interface Trapped Density of SiO2/4H-SiC by Oxidation of Atomic Oxygen", Materials Science Forum, Vols. 433-436, pp. 563-566, 2003
Online since
September 2003
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