Paper Title:
High Inversion Channel Mobility of MOSFET Fabricated on 4H-SiC C(000-1) Face Using H2 Post-Oxidation Annealing
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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
567-570
DOI
10.4028/www.scientific.net/MSF.433-436.567
Citation
K. Fukuda, J. Senzaki, K. Kojima, T. Suzuki, "High Inversion Channel Mobility of MOSFET Fabricated on 4H-SiC C(000-1) Face Using H2 Post-Oxidation Annealing", Materials Science Forum, Vols. 433-436, pp. 567-570, 2003
Online since
September 2003
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