Ag Growth on 3C-SiC(001) c(2x2) C-Terminated and c(4x2) Si-Terminated Surfaces |
| Journal |
Materials Science Forum (Volumes 433 - 436) |
| Volume |
Silicon Carbide and Related Materials - 2002 |
| Edited by |
Peder Bergman and Erik Janzén |
| Pages |
587-590 |
| DOI |
10.4028/www.scientific.net/MSF.433-436.587 |
| Citation |
N. Rodriguez et al., 2003, Materials Science Forum, 433-436, 587 |
| Online since |
September, 2003 |
| Authors |
N. Rodriguez, M. D'Angelo, V.Yu. Aristov, P. Soukiassian, A. Lescuras, C. Crotti, M. Pedio, P. Perfetti |
| Keywords |
Growth Mode, Metal/SiC Interface, Photoemission Spectroscopy, Silver, Synchrotron Radiation (XRD), Wide Band Gap Semiconductor |
| Full Paper |
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