Paper Title:
Electrical Activation of Ion-Implanted Nitrogen and Aluminum in 4H-SiC by Excimer Laser Annealing
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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
605-608
DOI
10.4028/www.scientific.net/MSF.433-436.605
Citation
Y. Tanaka, H. Tanoue, K. Arai, "Electrical Activation of Ion-Implanted Nitrogen and Aluminum in 4H-SiC by Excimer Laser Annealing", Materials Science Forum, Vols. 433-436, pp. 605-608, 2003
Online since
September 2003
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