Paper Title:
Effective Normal Field Dependence of Inversion Channel Mobility in 4H-SiC MOSFETs on the (11-20) Face
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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
613-616
DOI
10.4028/www.scientific.net/MSF.433-436.613
Citation
J. Senzaki, K. Kojima, T. Suzuki, K. Fukuda, "Effective Normal Field Dependence of Inversion Channel Mobility in 4H-SiC MOSFETs on the (11-20) Face", Materials Science Forum, Vols. 433-436, pp. 613-616, 2003
Online since
September 2003
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Price
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