Paper Title:
Damage Relaxation Pre-Activation Anneal in Al-Implanted SiC
  Abstract

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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
617-620
DOI
10.4028/www.scientific.net/MSF.433-436.617
Citation
W. Bahng, G. H. Song, N. K. Kim, S. C. Kim, K.S. Seo, H. W. Kim, E. D. Kim, "Damage Relaxation Pre-Activation Anneal in Al-Implanted SiC", Materials Science Forum, Vols. 433-436, pp. 617-620, 2003
Online since
September 2003
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