Paper Title:
High-Sensitivity Ion Beam Analytical Method for Studying Ion-Implanted SiC
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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
625-628
DOI
10.4028/www.scientific.net/MSF.433-436.625
Citation
G. Battistig, J. García López, N.Q. Khanh, Y. Morilla, M.A. Respaldiza, E. Szilágyi, "High-Sensitivity Ion Beam Analytical Method for Studying Ion-Implanted SiC", Materials Science Forum, Vols. 433-436, pp. 625-628, 2003
Online since
September 2003
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