Paper Title:
Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC
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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
633-636
DOI
10.4028/www.scientific.net/MSF.433-436.633
Citation
T. Ohshima, A. Uedono, O. Eryu, K. K. Lee, K. Abe, H. Itoh, K. Nakashima, "Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC", Materials Science Forum, Vols. 433-436, pp. 633-636, 2003
Online since
September 2003
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