Paper Title:
Co-Formation of Gate Electrode and Ohmic Contacts in SiC Power MOSFETs
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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
661-664
DOI
10.4028/www.scientific.net/MSF.433-436.661
Citation
G. H. Song, W. Bahng, N. K. Kim, S. C. Kim, K.S. Seo, E. D. Kim, "Co-Formation of Gate Electrode and Ohmic Contacts in SiC Power MOSFETs", Materials Science Forum, Vols. 433-436, pp. 661-664, 2003
Online since
September 2003
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