Paper Title:
Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical MOSFETs
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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
669-672
DOI
10.4028/www.scientific.net/MSF.433-436.669
Citation
N. Kiritani, M. Hoshi, S. Tanimoto, K. Adachi, S. I. Nishizawa, T. Yatsuo, H. Okushi, K. Arai, "Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical MOSFETs", Materials Science Forum, Vols. 433-436, pp. 669-672, 2003
Online since
September 2003
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