Paper Title:
Effective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature Gradient
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
67-70
DOI
10.4028/www.scientific.net/MSF.433-436.67
Citation
Z.G. Herro, M. Bickermann, B. M. Epelbaum, P. M. Masri , A. Winnacker, "Effective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature Gradient", Materials Science Forum, Vols. 433-436, pp. 67-70, 2003
Online since
September 2003
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Dominik Rankl, Valdas Jokubavicius, Mikael Syväjärvi, Peter Wellmann
Chapter I: SiC Material
Abstract:We have investigated the growth of 3C-SiC using sublimation growth in the temperature range from 1800°C to 1950°C. The supersaturation was...
77
Authors: Katsunori Danno, Satoshi Yamaguchi, Hiroyuki Kimoto, Kazuaki Sato, Takeshi Bessho
1.1 Bulk Growth
Abstract:Solution growth of high-quality 4H-SiC bulk crystals has been performed by using Si-Cr based melt at 2000°C. Through enlargement of crystal...
19
Authors: Lars Fahlbusch, Michael Schöler, Patrick Mattle, Sarah Schnitzer, Hossein Khodamoradi, Naoya Iwamoto, Bengt G. Svensson, P.J. Wellmann
1.1 Bulk Growth
Abstract:We developed a solution growth process related to the combination of the Vertical Bridgman and Vertical Gradient Freeze in a metal free Si-C...
33