Paper Title:
Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement
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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
685-688
DOI
10.4028/www.scientific.net/MSF.433-436.685
Citation
S. Izumi, H. Fujisawa, T. Tawara, K. Ueno, M. Hiraoka , "Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement", Materials Science Forum, Vols. 433-436, pp. 685-688, 2003
Online since
September 2003
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