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Al/Ti Ohmic Contacts to p-Type Ion-Implanted 6H-SiC: Mono- and Two- Dimensional Analysis of TLM Data, p.673
Low-Frequency Noise Measurements as a Quality Indicator for Ohmic Contacts to n-GaN, p.677
Thermal Stability of Pd Schottky Contacts to p-Type 6H-SiC, p.681
Suppression of Leakage Current Increase of 4H-SiC Schottky Barrier Diodes during High-Temperature Annealing by "Face-to-Face" Arrangement, p.685
The Effect of Plasma Etching on the Electrical Characteristics of 4H-SiC Schottky Diodes, p.689
Use of Laser Interferometry and Optical Emission Spectroscopy for Monitoring the Reactive Ion Etching of 6H - and 4H-SiC , p.693
Diffusion-Welded Al Contacts to p-Type SiC, p.697
Thermal Etching of 6H-SiC (11-20) Substrate Surface, p.701
Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission, p.705

Home > Materials Science Forum > Silicon Carbide and Related Materials - 2002 > The Effect of Plasma Etching on the Electrical...

Paper Title:

The Effect of Plasma Etching on the Electrical Characteristics of 4H-SiC Schottky Diodes

Periodical	Materials Science Forum (Volumes 433 - 436)
Main Theme	Silicon Carbide and Related Materials - 2002
Edited by	Peder Bergman and Erik Janzén
Pages	689-692
DOI	10.4028/www.scientific.net/MSF.433-436.689
Citation	N.O.V. Plank et al., 2003, Materials Science Forum, 433-436, 689
Online since	September, 2003
Authors	N.O.V. Plank, Liudi Jiang, A.M. Gundlach, Rebecca Cheung
Keywords	ICP Etching, Ideality Factor, Schottky Diode, Silicon Carbide (SiC)
Price	US$ 28,-

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