Paper Title:
The Effect of Plasma Etching on the Electrical Characteristics of 4H-SiC Schottky Diodes
  Abstract

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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
689-692
DOI
10.4028/www.scientific.net/MSF.433-436.689
Citation
N.O.V. Plank, L. Jiang , A.M. Gundlach, R. Cheung, "The Effect of Plasma Etching on the Electrical Characteristics of 4H-SiC Schottky Diodes", Materials Science Forum, Vols. 433-436, pp. 689-692, 2003
Online since
September 2003
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