Paper Title:
Use of Laser Interferometry and Optical Emission Spectroscopy for Monitoring the Reactive Ion Etching of 6H - and 4H-SiC
  Abstract

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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
693-696
DOI
10.4028/www.scientific.net/MSF.433-436.693
Citation
N. Camara, G. Konstantinidis, K. Zekentes, "Use of Laser Interferometry and Optical Emission Spectroscopy for Monitoring the Reactive Ion Etching of 6H - and 4H-SiC ", Materials Science Forum, Vols. 433-436, pp. 693-696, 2003
Online since
September 2003
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