Paper Title:

Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission

Periodical Materials Science Forum (Volumes 433 - 436)
Main Theme Silicon Carbide and Related Materials - 2002
Edited by Peder Bergman and Erik Janzén
Pages 705-708
DOI 10.4028/www.scientific.net/MSF.433-436.705
Citation O. Shigiltchoff et al., 2003, Materials Science Forum, 433-436, 705
Online since September, 2003
Authors O. Shigiltchoff, Song Bai, Robert P. Devaty, Wolfgang J. Choyke, Tsunenobu Kimoto, H. McD. Hobgood, Philip G. Neudeck, L.M. Porter
Keywords Breakdown Voltage, Current-Voltage, Internal Photoemission, Schottky Barrier
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