Paper Title:
Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission
| Periodical |
Materials Science Forum (Volumes 433 - 436)
|
| Main Theme |
Silicon Carbide and Related Materials - 2002
|
| Edited by |
Peder Bergman and Erik Janzén |
| Pages |
705-708 |
| DOI |
10.4028/www.scientific.net/MSF.433-436.705 |
| Citation |
O. Shigiltchoff et al., 2003, Materials Science Forum, 433-436, 705 |
| Online since |
September, 2003 |
| Authors |
O. Shigiltchoff, Song Bai, Robert P. Devaty, Wolfgang J. Choyke, Tsunenobu Kimoto, H. McD. Hobgood, Philip G. Neudeck, L.M. Porter |
| Keywords |
Breakdown Voltage, Current-Voltage, Internal Photoemission, Schottky Barrier |
| Price |
US$ 28,- |