Paper Title:
Characteristics of Ni Schottky Contacts on Compensated 4H-SiC Layers
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
709-712
DOI
10.4028/www.scientific.net/MSF.433-436.709
Citation
L. Kasamakova-Kolaklieva, R. Yakimova, R. Kakanakov, A. Kakanakova-Georgieva, M. Syväjärvi, E. Janzén, "Characteristics of Ni Schottky Contacts on Compensated 4H-SiC Layers", Materials Science Forum, Vols. 433-436, pp. 709-712, 2003
Online since
September 2003
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Konstantinos Zekentes, M. Kayambaki, S. Mousset
681
Authors: Y. Ding, K.B. Park, J.P. Pelz, A.V. Los, Michael S. Mazzola
1077
Authors: Ho Keun Song, Jeong Hyun Moon, Jeong Hyuk Yim, Hyeong Joon Kim
Abstract:In this paper, we attempted to grow semi-insulating SiC epitaxial layer by in-situ iron doping. Homoepitaxial growth of iron-doped 4H-SiC...
215
Authors: Min Seok Kang, Jung Ho Lee, Anders Hallén, Carl Mikael Zetterling, Wook Bahng, Nam Kyun Kim, Sang Mo Koo
Chapter 5: Processing of SiC
Abstract:We investigated the effect of the metal work-function and doping concentration on the barrier height of Ni-contacts with embedded...
857
Authors: Patrik Ščajev, K. Jarašiūnas, P.L. Abramov, S.P. Lebedev, A.A. Lebedev
Chapter 5: Characterization of Material and Point Defects
Abstract:We present investigation of carrier recombination and optical trap recharge in sublimation grown n- and p-type 3C layers by using...
401