Paper Title:
Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process
  Abstract

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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
725-730
DOI
10.4028/www.scientific.net/MSF.433-436.725
Citation
S. Tanimoto, M. Hoshi, N. Kiritani, H. Okushi, K. Arai, "Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process", Materials Science Forum, Vols. 433-436, pp. 725-730, 2003
Online since
September 2003
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