Paper Title:
Performance of Silicon Carbide Microwave MESFETs Using a Thin p-Doped Buffer Layer
  Abstract

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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
741-744
DOI
10.4028/www.scientific.net/MSF.433-436.741
Citation
J. Eriksson, N. Rorsman, H. Zirath, "Performance of Silicon Carbide Microwave MESFETs Using a Thin p-Doped Buffer Layer", Materials Science Forum, Vols. 433-436, pp. 741-744, 2003
Online since
September 2003
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