Paper Title:
Passivation Effect on Channel Recessed 4H-SiC MESFETs
  Abstract

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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
749-752
DOI
10.4028/www.scientific.net/MSF.433-436.749
Citation
H. Y. Cha , C. I. Thomas, G. Koley, L. F. Eastman, M. G. Spencer, "Passivation Effect on Channel Recessed 4H-SiC MESFETs", Materials Science Forum, Vols. 433-436, pp. 749-752, 2003
Online since
September 2003
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