Paper Title:
4H-SiC Lateral RESURF MOSFET with a Buried Channel Structure
  Abstract

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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
753-756
DOI
10.4028/www.scientific.net/MSF.433-436.753
Citation
S. Suzuki, S. Harada, T. Yatsuo, R. Kosugi, J. Senzaki, K. Fukuda, "4H-SiC Lateral RESURF MOSFET with a Buried Channel Structure", Materials Science Forum, Vols. 433-436, pp. 753-756, 2003
Online since
September 2003
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