Paper Title:
4H-SiC Lateral RESURF MOSFET with a Buried Channel Structure
| Periodical | Materials Science Forum (Volumes 433 - 436) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials - 2002 |
| Edited by | Peder Bergman and Erik Janzén |
| Pages | 753-756 |
| DOI | 10.4028/www.scientific.net/MSF.433-436.753 |
| Citation | Seiji Suzuki et al., 2003, Materials Science Forum, 433-436, 753 |
| Online since | September, 2003 |
| Authors | Seiji Suzuki, Shinsuke Harada, Tsutomu Yatsuo, Ryouji Kosugi, Junji Senzaki, Kenji Fukuda |
| Keywords | Blocking Voltage, Buried Channel, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), On Resistance, RESURF |
| Price | US$ 28,- |
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