Paper Title:
Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiC
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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
757-760
DOI
10.4028/www.scientific.net/MSF.433-436.757
Citation
S. Banerjee, T. P. Chow, R. J. Gutmann, "Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiC", Materials Science Forum, Vols. 433-436, pp. 757-760, 2003
Online since
September 2003
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