Paper Title:
Modelling of Radiation Response of p-Channel SiC MOSFETs
  Abstract

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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
761-764
DOI
10.4028/www.scientific.net/MSF.433-436.761
Citation
K. K. Lee, T. Ohshima, H. Itoh, "Modelling of Radiation Response of p-Channel SiC MOSFETs", Materials Science Forum, Vols. 433-436, pp. 761-764, 2003
Online since
September 2003
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