Paper Title:
Influence of Depletion Region Length on Specific On-Resistance in SiC MOSFET
  Abstract

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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
765-768
DOI
10.4028/www.scientific.net/MSF.433-436.765
Citation
K. Ohtsuka, Y. Tarui, M. Imaizumi, H. Sugimoto, T. Takami, T. Ozeki, "Influence of Depletion Region Length on Specific On-Resistance in SiC MOSFET", Materials Science Forum, Vols. 433-436, pp. 765-768, 2003
Online since
September 2003
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