Paper Title:
4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications
  Abstract

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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
769-772
DOI
10.4028/www.scientific.net/MSF.433-436.769
Citation
D. Peters, A. Schöner, P. Friedrichs, D. Stephani, "4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications", Materials Science Forum, Vols. 433-436, pp. 769-772, 2003
Online since
September 2003
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