4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications |
| Journal |
Materials Science Forum (Volumes 433 - 436) |
| Volume |
Silicon Carbide and Related Materials - 2002 |
| Edited by |
Peder Bergman and Erik Janzén |
| Pages |
769-772 |
| DOI |
10.4028/www.scientific.net/MSF.433-436.769 |
| Citation |
Dethard Peters et al., 2003, Materials Science Forum, 433-436, 769 |
| Online since |
September, 2003 |
| Authors |
Dethard Peters, Adolf Schöner, Peter Friedrichs, Dietrich Stephani |
| Keywords |
4H Silicon Carbide, Channel Mobility, Nitridation, Nitrous Oxide, Power MOSFET |
| Full Paper |
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