Paper Title:
Low Power Dissipation SiC Schottky Rectifiers with a Dual-Metal Planar Structure
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
819-822
DOI
10.4028/www.scientific.net/MSF.433-436.819
Citation
F. Roccaforte, F. La Via, A. La Magna, S. Di Franco, V. Raineri, "Low Power Dissipation SiC Schottky Rectifiers with a Dual-Metal Planar Structure", Materials Science Forum, Vols. 433-436, pp. 819-822, 2003
Online since
September 2003
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Dae Hwan Kim, Hoon Joo Na, Sang Yong Jung, In Bok Song, Myung Yoon Um, Ho Keun Song, Jae Kyeong Jeong, Jae Bin Lee, Hyeong Joon Kim
1001
Authors: R. Pérez, Narcis Mestres, Dominique Tournier, Xavier Jordá, Phillippe Godignon, Miquel Vellvehi
Abstract:In this work we demonstrate performant characteristics of 1.2KV Schottky, Junction Barrier Schottky (JBS) and implanted PN diodes processed...
945
Authors: Eugene A. Imhoff, Karl D. Hobart
Abstract:Forward and reverse bias performance of 10kV, 10A and 20A junction barrier-controlled Schottky 4H silicon carbide rectifiers are presented....
943
Authors: Jens Eriksson, Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Stefano Leone, Vito Raineri
Abstract:The electrical current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/3C-SiC Schottky diodes were studied as a function of...
331
Authors: Akimasa Kinoshita, Takasumi Ohyanagi, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura, Kazuo Arai
Abstract:It is known that a Schottky barrier height (b) of metal/C-face 4H-SiC Schottky barrier diode (SBD) differ from b of metal/Si-face 4H-SiC...
893