Paper Title:
Optimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling Process
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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
831-834
DOI
10.4028/www.scientific.net/MSF.433-436.831
Citation
T. Hatakeyama, M. Kushibe, T. Watanabe, S. Imai, T. Shinohe, "Optimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling Process", Materials Science Forum, Vols. 433-436, pp. 831-834, 2003
Online since
September 2003
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