Paper Title:
The Electrothermal Behavior of 4H-SiC Schottky Diodes at Forward Bias Considering Single Pulse and Pulsed Current Operation
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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
839-842
DOI
10.4028/www.scientific.net/MSF.433-436.839
Citation
H. P. Felsl, G. Wachutka, R. Rupp, "The Electrothermal Behavior of 4H-SiC Schottky Diodes at Forward Bias Considering Single Pulse and Pulsed Current Operation", Materials Science Forum, Vols. 433-436, pp. 839-842, 2003
Online since
September 2003
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