Paper Title:
Simulations of High-Voltage 4H-SiC p+nn+ Diodes Using a Transient Model for the Deep Boron Level
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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
847-850
DOI
10.4028/www.scientific.net/MSF.433-436.847
Citation
M. Domeij, U. Zimmermann, D. Åberg, J. Österman, A. Hallén, M. Östling, "Simulations of High-Voltage 4H-SiC p+nn+ Diodes Using a Transient Model for the Deep Boron Level", Materials Science Forum, Vols. 433-436, pp. 847-850, 2003
Online since
September 2003
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