Paper Title:
Reverse Current Recovery in 4H-SiC Diodes with n- and p-Base
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
855-858
DOI
10.4028/www.scientific.net/MSF.433-436.855
Citation
P. A. Ivanov, I. V. Grekhov, A. O. Konstantinov, T.'yana P. Samsonova, "Reverse Current Recovery in 4H-SiC Diodes with n- and p-Base", Materials Science Forum, Vols. 433-436, pp. 855-858, 2003
Online since
September 2003
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: R. Pérez, Narcis Mestres, Dominique Tournier, Xavier Jordá, Phillippe Godignon, Miquel Vellvehi
Abstract:In this work we demonstrate performant characteristics of 1.2KV Schottky, Junction Barrier Schottky (JBS) and implanted PN diodes processed...
945
Authors: Koji Nakayama, Yoshitaka Sugawara, R. Ishii, Hidekazu Tsuchida, Toshiyuki Miyanagi, Isaho Kamata, Tomonori Nakamura
Abstract:Forward voltage degradation has been reduced by fabricating diodes on the (000-1)C-face. The reverse recovery characteristics of the 4H-SiC...
1359
Authors: Pavel A. Ivanov, Michael E. Levinshtein, Mykola S. Boltovets, Valentyn A. Krivutsa, John W. Palmour, Mrinal K. Das, Brett A. Hull
Abstract:Forward current-voltage (I-V) characteristics and non-equilibrium carrier lifetime, τ were measured in 4H-SiC pin diodes (10-kV rated, 100...
921
Authors: Kenichi Ohtsuka, Yoichiro Tarui, Tomokatsu Watanabe, Keiko Fujihira, Yoshinori Matsuno
Abstract:Forward voltage of SiC pin diodes is evaluated by device simulation, where a p-type contact is described by Schottky barrier to a p-type...
1035
Authors: Pavel A. Ivanov, Igor V. Grekhov
Chapter 10: Device and Application
Abstract:Mesa-epitaxial 4H-SiC p+-p-no-n+-diodes were fabricated and their reverse recovery characteristics were...
865