Paper Title:
4H-SiC pn Diode Grown by LPE Method for High-Power Applications
  Abstract

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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
867-870
DOI
10.4028/www.scientific.net/MSF.433-436.867
Citation
N.I. Kuznetsov, D. Bauman, A. Gavrilin, L. Kassamakova, R. Kakanakov, G. Sarov, T. Cholakova, K. Zekentes, V. I. Dimitrov, "4H-SiC pn Diode Grown by LPE Method for High-Power Applications", Materials Science Forum, Vols. 433-436, pp. 867-870, 2003
Online since
September 2003
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