Paper Title:
Fabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge Termination
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
879-882
DOI
10.4028/www.scientific.net/MSF.433-436.879
Citation
I. Sankin, J.B. Dufrene, J. N. Merrett, J. B. Casady, "Fabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge Termination", Materials Science Forum, Vols. 433-436, pp. 879-882, 2003
Online since
September 2003
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: R. Pérez, Narcis Mestres, Dominique Tournier, Xavier Jordá, Phillippe Godignon, Miquel Vellvehi
Abstract:In this work we demonstrate performant characteristics of 1.2KV Schottky, Junction Barrier Schottky (JBS) and implanted PN diodes processed...
945
Authors: Peter A. Losee, Can Hua Li, R.J. Kumar, T. Paul Chow, I. Bhat, Ronald J. Gutmann, Robert E. Stahlbush
Abstract:The on-state and switching performance of high voltage 4H-SiC junction rectifiers are compared using numerical simulations and experimental...
1363
Authors: Konstantin Vassilevski, Irina P. Nikitina, Alton B. Horsfall, Nicolas G. Wright, Anthony G. O'Neill, Keith P. Hilton, A.G. Munday, A.J. Hydes, Michael J. Uren, C. Mark Johnson
Abstract:High voltage 4H-SiC Schottky diodes with single-zone junction termination extension (JTE) have been fabricated and characterised. Commercial...
873
Authors: Heu Vang, Christophe Raynaud, Pierre Brosselard, Mihai Lazar, Pierre Cremillieu, Jean Louis Leclercq, Sigo Scharnholz, Dominique Planson, Jean-Pierre Chante
Abstract:Silicon carbide devices limitations often originate from the quality of the substrate material. Therefore it is interesting to investigate...
901
Authors: Gabriel Civrac, Farah Laariedh, Nicolas Thierry-Jebali, Mihai Lazar, Dominique Planson, Pierre Brosselard, Jawad Ul Hassan, Anne Henry, Erik Janzén, Bertrand Vergne, Sigo Scharnholz
Chapter 6: SiC Devices, Circuits and Systems
Abstract:This paper reports the fabrication and electrical characterization of PiN diodes on an on-axis grown epitaxial layer. TCAD simulations have...
969