Fabrication and Characterisation of High-Voltage SiC-Thyristors |
| Journal |
Materials Science Forum (Volumes 433 - 436) |
| Volume |
Silicon Carbide and Related Materials - 2002 |
| Edited by |
Peder Bergman and Erik Janzén |
| Pages |
883-886 |
| DOI |
10.4028/www.scientific.net/MSF.433-436.883 |
| Citation |
Volker Zorngiebel et al., 2003, Materials Science Forum, 433-436, 883 |
| Online since |
September, 2003 |
| Authors |
Volker Zorngiebel, Sigo Scharnholz, Emil Spahn, Pierre Brosselard, N. Arssi, Jean-Pierre Chante, Dominique Planson, Christophe Raynaud, B. Spangenberg, H. Kurz |
| Keywords |
EGR, GTO, High Power Devices, Junction Termination Extension (JTE), Mesa, Silicon Carbide (SiC), Thyristor |
| Full Paper |
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