Paper Title:
SiC Device Limitation Breakthrough with Novel Floating Junction Structure on 4H-SiC
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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
887-890
DOI
10.4028/www.scientific.net/MSF.433-436.887
Citation
K. Adachi, I. Omura, R. Ono, J. Nishio, T. Shinohe, H. Ohashi, K. Arai, "SiC Device Limitation Breakthrough with Novel Floating Junction Structure on 4H-SiC", Materials Science Forum, Vols. 433-436, pp. 887-890, 2003
Online since
September 2003
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