Paper Title:
Novel Buried Field Rings Edge Termination for 4H-SiC High-Voltage Devices
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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
891-894
DOI
10.4028/www.scientific.net/MSF.433-436.891
Citation
A. Mihaila, F. Udrea, P. Godignon, T. Trajkovic, G. Brezeanu, J. Rebollo, J. Millan, "Novel Buried Field Rings Edge Termination for 4H-SiC High-Voltage Devices", Materials Science Forum, Vols. 433-436, pp. 891-894, 2003
Online since
September 2003
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