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Investigation of Mass Transport during SiC PVT Growth Using Digital X-Ray Imaging, 13C Labeling of Source Material and Numerical Modeling

Journal Materials Science Forum (Volumes 433 - 436)
Volume Silicon Carbide and Related Materials - 2002
Edited by Peder Bergman and Erik Janzén
Pages 9-12
DOI 10.4028/www.scientific.net/MSF.433-436.9
Citation Peter J. Wellmann et al., 2003, Materials Science Forum, 433-436, 9
Online since September, 2003
Authors Peter J. Wellmann, Z.G. Herro, M. Selder, F. Durst, Roland Püsche, Martin Hundhausen, Lothar Ley, Albrecht Winnacker
Keywords Physical Vapor Transport Growth, Raman Spectroscopy, Si13C, Source Material, X-Ray Imaging
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