Paper Title:

Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC

Periodical Materials Science Forum (Volumes 433 - 436)
Main Theme Silicon Carbide and Related Materials - 2002
Edited by Peder Bergman and Erik Janzén
Pages 901-906
DOI 10.4028/www.scientific.net/MSF.433-436.901
Citation H. Lendenmann et al., 2003, Materials Science Forum, 433-436, 901
Online since September, 2003
Authors H. Lendenmann, Peder Bergman, Fanny Dahlquist, Christer Hallin
Keywords 300A/4.5kV, Buffer Layer, Electroluminescence, Forward Degradation, SiC Bipolar Diode, SiC Defect Identification, Stacking Fault
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