Paper Title:
Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC
| Periodical |
Materials Science Forum (Volumes 433 - 436)
|
| Main Theme |
Silicon Carbide and Related Materials - 2002
|
| Edited by |
Peder Bergman and Erik Janzén |
| Pages |
901-906 |
| DOI |
10.4028/www.scientific.net/MSF.433-436.901 |
| Citation |
H. Lendenmann et al., 2003, Materials Science Forum, 433-436, 901 |
| Online since |
September, 2003 |
| Authors |
H. Lendenmann, Peder Bergman, Fanny Dahlquist, Christer Hallin |
| Keywords |
300A/4.5kV, Buffer Layer, Electroluminescence, Forward Degradation, SiC Bipolar Diode, SiC Defect Identification, Stacking Fault |
| Price |
US$ 28,- |