Paper Title:
Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC
  Abstract

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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
901-906
DOI
10.4028/www.scientific.net/MSF.433-436.901
Citation
H. Lendenmann, P. Bergman, F. Dahlquist, C. Hallin, "Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC", Materials Science Forum, Vols. 433-436, pp. 901-906, 2003
Online since
September 2003
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