Paper Title:
Insight into the Degradation Phenomenon in SiC Devices from Ab Initio Calculations of the Electronic Structure of Single and Multiple Stacking Faults
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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
907-912
DOI
10.4028/www.scientific.net/MSF.433-436.907
Citation
U. Lindefelt, H. Iwata, S. Öberg, P. R. Briddon, "Insight into the Degradation Phenomenon in SiC Devices from Ab Initio Calculations of the Electronic Structure of Single and Multiple Stacking Faults ", Materials Science Forum, Vols. 433-436, pp. 907-912, 2003
Online since
September 2003
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