Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport |
| Journal |
Materials Science Forum (Volumes 433 - 436) |
| Volume |
Silicon Carbide and Related Materials - 2002 |
| Edited by |
Peder Bergman and Erik Janzén |
| Pages |
91-94 |
| DOI |
10.4028/www.scientific.net/MSF.433-436.91 |
| Citation |
H. J. Rost et al., 2003, Materials Science Forum, 433-436, 91 |
| Online since |
September, 2003 |
| Authors |
H. J. Rost, K. Irmscher, J. Doerschel, D. Siche, D. Schulz, Jürgen Wollweber |
| Keywords |
Electrical Properties, Nitrogen Doping, Photoluminescence (PL), SiC Bulk Growth, Stacking Fault |
| Full Paper |
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