Paper Title:
Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport
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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
91-94
DOI
10.4028/www.scientific.net/MSF.433-436.91
Citation
H. J. Rost, K. Irmscher, J. Doerschel , D. Siche, D. Schulz, J. Wollweber, "Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport", Materials Science Forum, Vols. 433-436, pp. 91-94, 2003
Online since
September 2003
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