Paper Title:
Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11-20) Face
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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
925-928
DOI
10.4028/www.scientific.net/MSF.433-436.925
Citation
K. Kojima, T. Ohno, T. Fujimoto, M. Katsuno, N. Ohtani, J. Nishio, Y. Ishida, T. Takahashi, T. Suzuki, T. Tanaka, K. Arai, "Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11-20) Face", Materials Science Forum, Vols. 433-436, pp. 925-928, 2003
Online since
September 2003
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