Effects of Nitrogen Radical Irradiation on Performance of SiC MOSFETs |
| Journal |
Materials Science Forum (Volumes 433 - 436) |
| Volume |
Silicon Carbide and Related Materials - 2002 |
| Edited by |
Peder Bergman and Erik Janzén |
| Pages |
945-948 |
| DOI |
10.4028/www.scientific.net/MSF.433-436.945 |
| Citation |
Hiroshi Yano et al., 2003, Materials Science Forum, 433-436, 945 |
| Online since |
September, 2003 |
| Authors |
Hiroshi Yano, Yusuke Maeyama, Y. Furumoto, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki |
| Keywords |
Channel Mobility, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), MOS, Nitridation, Nitrogen Radical |
| Full Paper |
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