Paper Title:
Effects of Nitrogen Radical Irradiation on Performance of SiC MOSFETs
  Abstract

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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
945-948
DOI
10.4028/www.scientific.net/MSF.433-436.945
Citation
H. Yano, Y. Maeyama, Y. Furumoto, T. Hatayama, Y. Uraoka, T. Fuyuki, "Effects of Nitrogen Radical Irradiation on Performance of SiC MOSFETs", Materials Science Forum, Vols. 433-436, pp. 945-948, 2003
Online since
September 2003
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