Morphological Features of Sublimation-Grown 4H-SiC Layers |
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| Journal | Materials Science Forum (Volumes 433 - 436) |
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| Volume | Silicon Carbide and Related Materials - 2002 |
| Edited by | Peder Bergman and Erik Janzén |
| Pages | 95-98 |
| DOI | 10.4028/www.scientific.net/MSF.433-436.95 |
| Citation | D. Schulz et al., 2003, Materials Science Forum, 433-436, 95 |
| Online since | September, 2003 |
| Authors | D. Schulz, J. Doerschel |
| Keywords | 4H-SiC, Physical Vapor Transport, Single Crystal Growth, Surface Morphology |
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