Paper Title:
Implementation of Hot-Wall MOCVD to the Growth of High-Quality GaN on SiC
  Abstract

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Periodical
Materials Science Forum (Volumes 433-436)
Edited by
Peder Bergman and Erik Janzén
Pages
991-994
DOI
10.4028/www.scientific.net/MSF.433-436.991
Citation
A. Kakanakova-Georgieva, U. Forsberg, C. Hallin, P.O.Å. Persson, L. Storasta, G.R. Pozina, J. Birch, L. Hultman, E. Janzén, "Implementation of Hot-Wall MOCVD to the Growth of High-Quality GaN on SiC", Materials Science Forum, Vols. 433-436, pp. 991-994, 2003
Online since
September 2003
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