Microstructure of GaN Layers Grown onto (001) and (111) GaAs Substrates by Molecular Beam Epitaxy |
| Journal |
Materials Science Forum (Volumes 433 - 436) |
| Volume |
Silicon Carbide and Related Materials - 2002 |
| Edited by |
Peder Bergman and Erik Janzén |
| Pages |
999-1002 |
| DOI |
10.4028/www.scientific.net/MSF.433-436.999 |
| Citation |
László S. Tóth et al., 2003, Materials Science Forum, 433-436, 999 |
| Online since |
September, 2003 |
| Authors |
László S. Tóth, Béla Pécz, Zsolt Czigány, K. Amimer, A. Georgakilas |
| Keywords |
Galium Nitride (GaN), Molecular Beam Epitaxy, TEM |
| Full Paper |
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