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Silicon Carbide and Related Materials - 2002

Materials Science Forum Volumes 433 - 436

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• p119 Comparison between Ar and N₂ for High-Temperature Treatment of 4H-SiC Substrates   [ 1 M ]
  Authors: Ghassan Younes, Gabriel Ferro, Christophe Jacquier, Jacques Dazord, Yves Monteil
• p125 SiC Epitaxy on Non-Standard Surfaces   [ 383 K ]
  Authors: Hiroyuki Matsunami, Tsunenobu Kimoto
• p131 4H-SiC Epitaxial Growth for High-Power Devices   [ 261 K ]
  Authors: Hidekazu Tsuchida, Isaho Kamata, Tamotsu Jikimoto, Toshiyuki Miyanagi, Kunikaza Izumi
• p137 Predictions of Nitrogen Doping in SiC Epitaxial Layers   [ 46 K ]
  Authors: Örjan Danielsson, Urban Forsberg, Erik Janzén
• p141 Experiment and Modeling of the Large-Area Etching and Growth Rate of Epitaxial SiC   [ 258 K ]
  Authors: Jérôme Mezière, Michel Pons, Jean Marc Dedulle, Elisabeth Blanquet, Pierre Ferret, Lea Di Cioccio, Thierry Billon
• p145 Chemical Vapor Deposition of n-Type SiC Epitaxial Layers Using Phosphine and Nitrogen as the Precursors   [ 84 K ]
  Authors: Rong Jun Wang, I. Bhat, T. Paul Chow
• p149 Wide-Area Homoepitaxial Growth of 6H-SiC on Nearly On-Axis (0001) by Chemical Vapor Deposition   [ 235 K ]
  Authors: Shun-ichi Nakamura, Tsunenobu Kimoto, Hiroyuki Matsunami
• p153 Nitrogen Delta Doping in 4H-SiC Epilayers   [ 373 K ]
  Authors: Anne Henry, L. Storasta, Erik Janzén
• p157 Temperature Effects in SiC Epitaxial Growth   [ 129 K ]
  Authors: James D. Oliver
• p161 Fast Epitaxial Growth of High-Quality 4H-SiC by Vertical Hot-Wall CVD   [ 463 K ]
  Authors: Keiko Fujihira, Tsunenobu Kimoto, Hiroyuki Matsunami
• p165 Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System   [ 286 K ]
  Authors: C. Sartel, Jean Marie Bluet, Veronique Soulière, I. El Harrouni, Yves Monteil, Michel Mermoux, Gérard Guillot
• p169 Origin and Behaviour of Deep Levels in Sublimation Growth of 4H-SiC Layers   [ 33 K ]
  Authors: Mikael Syväjärvi, Rositza Yakimova, R.R Ciechonski, Alexander A. Lebedev, D.V. Davydov, Erik Janzén
• p173 Vacancies in As-Grown and Electron-Irradiated 4H-SiC Epilayers Investigated by Positron Annihilation   [ 188 K ]
  Authors: S. Dannefaer, V. Avalos, Mikael Syväjärvi, Rositza Yakimova
• p177 Computational Modeling for the Development of CVD SiC Epitaxial Growth Processes   [ 453 K ]
  Authors: Galyna Melnychuck, Yaroslav Koshka, S. Yingquan, Michael S. Mazzola, C.U. Pittman
• p181 Is Al-Si a Good Melt for the Low-Temperature LPE of 4H-SiC?   [ 484 K ]
  Authors: Christophe Jacquier, François Cauwet, Jean Claude Viala, Yves Monteil