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Lead-Free Layered Perovskite Film Capacitor for Ferroelectric Random Access Memory

Journal Materials Science Forum (Volume 439)
Volume Eco-Materials Processing & Design IV
Edited by Hyung Sun Kim, Sang-Yeup Park and Soo Wohn Lee
Pages 1-6
DOI 10.4028/www.scientific.net/MSF.439.1
Citation Uong Chon et al., 2003, Materials Science Forum, 439, 1
Online since November, 2003
Authors Uong Chon, Jeong Seob Shim, Hyun M. Jang
Keywords Ferroelectric Capacitor, FRAM, Layered Perovskite, Lead-Free, Samarium
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