Paper Title:
Effect of Implanted Ion Mass and Incident Energy on Defect and Ion Depth-Distributions in Ion-Implanted Si
  Abstract

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Periodical
Materials Science Forum (Volumes 445-446)
Edited by
Toshio Hyodo, Yoshinori Kobayashi, Yasuyuki Nagashima, Haruo Saito
Pages
108-110
DOI
10.4028/www.scientific.net/MSF.445-446.108
Citation
K. Hirata, Y. Kobayashi, "Effect of Implanted Ion Mass and Incident Energy on Defect and Ion Depth-Distributions in Ion-Implanted Si", Materials Science Forum, Vols. 445-446, pp. 108-110, 2004
Online since
January 2004
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