Paper Title:
Positron-Electron Autocorrelation Function Study of E-Center in Phosphorus-Doped Silicon
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 445-446)
Edited by
Toshio Hyodo, Yoshinori Kobayashi, Yasuyuki Nagashima, Haruo Saito
Pages
111-113
DOI
10.4028/www.scientific.net/MSF.445-446.111
Citation
K.F. Ho, C.D. Beling, S. Fung, M. Biasini, G. Ferro, M. Gong, "Positron-Electron Autocorrelation Function Study of E-Center in Phosphorus-Doped Silicon", Materials Science Forum, Vols. 445-446, pp. 111-113, 2004
Online since
January 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Toshinobu Chiba, Yasuyoshi Nagai, Zheng Tang, Takashi Akahane, Masuyuki Hasegawa, Minoru Takenaka, Eiichi Kuramoto
380
Authors: K.F. Ho, H.M. Ching, K.W. Cheng, C.D. Beling, S. Fung, K.P. Ng
477
Authors: Edward Boroński
Abstract:We present an approach taking into account the effect of electron-electron (e-e) correlations on electron-positron (e-p) momentum density...
5
Authors: Jerzy Dryzek, Sylwia Lewicka
Chapter 4: Confined Systems
Abstract:The 2D Positronium (2D Ps) atom confined in the 2D cave has been considered and its properties were compared with the 3D Positronium located...
103