Paper Title:
Identities of the Deep Level Defects E1/E2 in 6H Silicon Carbide
  Abstract

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Periodical
Materials Science Forum (Volumes 445-446)
Edited by
Toshio Hyodo, Yoshinori Kobayashi, Yasuyuki Nagashima, Haruo Saito
Pages
135-137
DOI
10.4028/www.scientific.net/MSF.445-446.135
Citation
C.C. Ling, X.D. Chen, M. Gong, H.M. Weng, D.S. Hang, C.D. Beling, S. Fung, T.W. Lam, C.H. Lam, "Identities of the Deep Level Defects E1/E2 in 6H Silicon Carbide", Materials Science Forum, Vols. 445-446, pp. 135-137, 2004
Online since
January 2004
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