Paper Title:
Interface Properties of 4H-SiC MOS Structures Studied by a Slow Positron Beam
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 445-446)
Edited by
Toshio Hyodo, Yoshinori Kobayashi, Yasuyuki Nagashima, Haruo Saito
Pages
144-146
DOI
10.4028/www.scientific.net/MSF.445-446.144
Citation
M. Maekawa, A. Kawasuso, M. Yoshikawa, A. Ichimiya, "Interface Properties of 4H-SiC MOS Structures Studied by a Slow Positron Beam", Materials Science Forum, Vols. 445-446, pp. 144-146, 2004
Online since
January 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Valeri V. Afanas'ev, Florin Ciobanu, Sima Dimitrijev, Gerhard Pensl, Andre Stesmans
Abstract:Properties of defects encountered at the oxidized surfaces of silicon carbide (SiC) suggest their origin to be different from the...
563
Authors: Jia Xuan Liao, C.R. Yang, J.H. Zhang, H. Chen, C.L. Fu, W.J. Leng
Abstract:Ba0.6Sr0.4TiO3 (BST) thin films deposited on Pt/Ti/SiO2/Si substrates by radio frequency magnetron sputtering and crystallized by rapid...
374
Authors: Y.Y. Zhu, Z.B. Fang, C. Liao, Shu Chen, Z.M. Jiang
Abstract:Synchrotron radiation photoemission spectroscopy was used to study the initial growth of Er2O3 films on Si in O2 pressures of 7×10-6 Torr....
625
Authors: Tsunenobu Kimoto, Gan Feng, Toru Hiyoshi, Koutarou Kawahara, Masato Noborio, Jun Suda
Abstract:Extended defects and deep levels generated during epitaxial growth of 4H-SiC and device processing have been reviewed. Three types in-grown...
645
Authors: Paul B. Klein
Chapter 3: Physical Properties and Characterization of SiC
Abstract:Recent advances in preparing n-type 4H-SiC with long carrier lifetimes have greatly enhanced the possibility of realizing commercially...
279